5-nm Gate-All-Around Transistor Technology With 3-D Stacked Nanosheets
Published in IEEE Transactions on Electron Devices, 2022
Recommended citation: A. K. Gundu and V. Kursun, "5-nm Gate-All-Around Transistor Technology With 3-D Stacked Nanosheets," in IEEE Transactions on Electron Devices, vol. 69, no. 3, pp. 922-929, March 2022, doi: 10.1109/TED.2022.3143774.
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